Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability

Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a structure is provided having a substrate; an insulator over the substrate; and a single-crystal phase change material over the insulator. In another aspect, an electronic device is provided having a substrate; an insulator over the substrate; and a single-crystal phase change material over the insulator, wherein the single-crystal phase change material makes up a plurality of cells of the electronic device, each of the cells being configured to have one of two forms: 1) a first form consisting solely of single-crystal phase change material, and 2) a second form consisting of a region of single-crystal phase change material in contact with a region of amorphous phase change material.