MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL

专利类型: 
相变材料专利导航
公开(公告)号: 
US20190131520A1
申请日: 
2018-10-23
申请局: 
US
摘要: 
A memory cell includes a phase-change material. A via is electrically connected with a transistor and an element for heating the phase-change material. An electrically-conductive thermal barrier is positioned between the via and the heating element.
原始专利权人: 
STMICROELECTRONICS (CROLLES 2) SAS
受让人: 
STMICROELECTRONICS (CROLLES 2) SAS
当前专利权人: 
STMicroelectronics Crolles 2 SAS